S4111-16R

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Hamamatsu S4111-16R Silicon PIN Photodiode – Technical Specifications Table

Parameter	Symbol	Condition / Unit	Value / Rating
Package Type	–	–	4-element quadrant (4-chips in one package)
Active Area (Total)	–	mm²	4 x (1.6 x 1.6) = 4 x 2.56
Active Area per Segment	A	mm x mm	1.6 x 1.6
Gap between Segments	–	μm	100
Spectral Range	λ	nm	320 to 1100
Peak Wavelength	λₚ	nm	960
Photosensitivity	S	A/W @ 960 nm	0.64
Quantum Efficiency	QE	% @ 960 nm	83
Terminal Capacitance	Cₜ	Vᴿ=5 V, f=1 MHz, pF (per element)	8 (Typ.)
Rise Time	tᵣ	Vᴿ=5 V, Rʟ=1 kΩ, ns	15 (Typ.)
Dark Current	Iᴅ	Vᴿ=5 V, nA (per element)	5 (Max.)
Shunt Resistance	Rₛₕ	Vᴿ=0 V, MΩ (per element)	1000 (Min.)
Breakdown Voltage	Vᴮᴿ	Iᴅ=10 μA, V	60 (Min.)
Operating Temperature	Tₒₚᵣ	°C	-10 to +60
Storage Temperature	Tₛₜᵍ	°C	-25 to +70