C7950

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Product Specifications: Hamamatsu C7950

Category	Parameter	Specification / Description
General Information	Product Code	C7950
	Product Type	Silicon Photodiode Array for Position Detection
	Description	A large-area, monolithic PN photodiode with multiple electrodes on the backside. Used for detecting the center of gravity of a light spot.
Active Area	Shape & Size	Square, 10 mm x 10 mm
Number of Elements	4	The single diode is segmented into 4 discrete elements (A, B, C, D).
Substrate Material		High-Resistivity N-Type Silicon
Window Material		Glass
Spectral Response	Range	320 nm to 1100 nm
	Peak Wavelength	960 nm (Near-Infrared)
Optical Characteristics	Position Detection Error	< ±0.3% (of the active area length)
	Light Sensitivity	Typ. 0.6 A/W (at 900 nm)
Electrical Characteristics	Operating Mode	Photoconductive (Requires a reverse bias voltage)
	Reverse Bias Voltage	Recommended: 5 V
	Terminal Capacitance	Typ. 120 pF (per element, at V<sub>R</sub>=5 V, f=1 MHz)
	Dark Current	Typ. 50 pA (per element, at V<sub>R</sub>=5 V)
	Rise Time	Typ. 2 μs (V<sub>R</sub>=5 V, R<sub>L</sub>=1 kΩ)
Mechanical	Package	Ceramic package with a glass window
	Pin Configuration	6-pin configuration (4 anodes + common cathode)
	Weight	Approx. 1 g
Operating Temperature		-10 °C to +60 °C
Applications		Laser beam alignment, Optical position sensors, Auto-focus systems, Vibration monitoring, Angle sensors.