S8650

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IMPORTANT NOTICE

1. You’ll receive an order information email in your inbox. (Please remember to check the spam folder if you didn’t hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

S8650 Silicon NPN Transistor – Technical Specifications

Parameter	Symbol	Value	Unit	Conditions / Notes
Absolute Maximum Ratings (Ta = 25°C)
Collector-Emitter Voltage	V<sub>CEO</sub>	600	V	This is its key feature
Collector-Base Voltage	V<sub>CB</sub>	700	V
Emitter-Base Voltage	V<sub>EB</sub>	9	V
Collector Current	I<sub>C</sub>	3.0	A
Peak Collector Current	I<sub>CP</sub>	6.0	A
Base Current	I<sub>B</sub>	1.0	A
Total Power Dissipation	P<sub>T</sub>	40	W	T<sub>c</sub> = 25°C (on heatsink)
Junction Temperature	T<sub>j</sub>	150	°C
Storage Temperature	T<sub>stg</sub>	-55 to +150	°C
Electrical Characteristics (Ta = 25°C)
Collector-Emitter Breakdown Voltage	V<sub>(BR)CEO</sub>	600	V	I<sub>C</sub> = 10 mA, I<sub>B</sub> = 0
Collector-Base Breakdown Voltage	V<sub>(BR)CBO</sub>	700	V	I<sub>C</sub> = 1 mA, I<sub>E</sub> = 0
Emitter-Base Breakdown Voltage	V<sub>(BR)EBO</sub>	9	V	I<sub>E</sub> = 1 mA, I<sub>C</sub> = 0
DC Current Gain	h<sub>FE</sub>	8 – 40	–	Low gain is typical for HV transistors
Collector-Emitter Saturation Voltage	V<sub>CE(sat)</sub>	1.0 (max)	V	I<sub>C</sub> = 1.5 A, I<sub>B</sub> = 0.3 A
Base-Emitter Saturation Voltage	V<sub>BE(sat)</sub>	2.0 (max)	V	I<sub>C</sub> = 1.5 A, I<sub>B</sub> = 0.3 A
Turn-On Time	t<sub>on</sub>	0.5 (max)	µs
Storage Time	t<sub>stg</sub>	3.0 (max)	µs
Fall Time	t<sub>f</sub>	1.0 (max)	µs