S16586

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You’ll receive an order information email in your inbox. (Please remember to check the spam folder if you didn’t hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Hamamatsu S16586 Silicon PIN Photodiode – Technical Specifications Table

Parameter	Symbol	Condition / Unit	Value / Rating
Active Area	A	mm²	1.6 x 1.6 (2.56)
Package Type	–	–	Plastic mold, surface mount type (SMD)
Spectral Range	λ	nm	320 to 1100
Peak Wavelength	λₚ	nm	960
Photosensitivity	S	A/W @ 960 nm	0.64
Quantum Efficiency	QE	% @ 960 nm	83
Terminal Capacitance	Cₜ	Vᴿ=0 V, f=1 MHz, pF	85 (Typ.)
Rise Time / Fall Time	tᵣ / t_f	Vᴿ=0 V, Rʟ=1 kΩ, ns	4 (Typ.)
Dark Current	Iᴅ	Vᴿ=5 V, nA	5 (Max.)
Shunt Resistance	Rₛₕ	Vᴿ=0 V, MΩ	1000 (Min.)
Breakdown Voltage	Vᴮᴿ	Iᴅ=10 μA, V	60 (Min.)
Operating Temperature	Tₒₚᵣ	°C	-20 to +80
Storage Temperature	Tₛₜᵍ	°C	-40 to +85
Soldering Temperature	–	°C, for 10 sec	260 (Max.)