S1337-21

Delivery:

Payment:

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You’ll receive an order information email in your inbox. (Please remember to check the spam folder if you didn’t hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

S1337-21 NPN Silicon RF Transistor – Technical Parameters

Parameter Category	Symbol	Value	Unit	Conditions / Notes
Absolute Maximum Ratings
Collector-Base Voltage	V<sub>CB</sub>	30	V
Collector-Emitter Voltage	V<sub>CE</sub>	20	V
Emitter-Base Voltage	V<sub>EB</sub>	3	V
Collector Current	I<sub>C</sub>	100	mA
Total Power Dissipation	P<sub>T</sub>	300	mW	T<sub>a</sup> = 25°C
Junction Temperature	T<sub>j</sub>	150	°C
Storage Temperature	T<sub>stg</sub>	-55 to +150	°C
Electrical Characteristics (T<sub>a</sub> = 25°C unless otherwise noted)
Off Characteristics
Collector-Base Breakdown Voltage	BV<sub>CBO</sub>	30	V	I<sub>C</sub> = 1 mA
Collector-Emitter Breakdown Voltage	BV<sub>CEO</sub>	20	V	I<sub>C</sub> = 1 mA
Emitter-Base Breakdown Voltage	BV<sub>EBO</sub>	3	V	I<sub>E</sub> = 1 mA
Collector Cut-off Current	I<sub>CBO</sub>	–	0.1	μA	V<sub>CB</sub> = 20 V
On Characteristics
DC Current Gain	h<sub>FE</sub>	40 ~ 200	–	V<sub>CE</sub> = 10 V, I<sub>C</sub> = 50 mA
Small Signal Characteristics
Transition Frequency	f<sub>T</sub>	1.3	GHz	Typ.	V<sub>CE</sub> = 10 V, I<sub>C</sub> = 50 mA, f = 100 MHz
Output Capacitance	C<sub>ob</sub>	2.5	pF		V<sub>CB</sub> = 10 V, I<sub>E</sub> = 0, f = 1 MHz
Power Characteristics
Output Power	P<sub>out</sub>	250	mW	Typ.	f = 400 MHz
Power Gain	G<sub>pe</sub>	10	dB	Typ.	f = 400 MHz
Collector Efficiency	η<sub>c</sub>	60	%	Typ.	f = 400 MHz