S1226-8BQ

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Hamamatsu S1226-8BQ Photodiode with Built-in Amplifier Specifications

Parameter Category	Parameter	Specification / Value	Notes / Conditions
General Model Info	Product Type	Silicon PIN Photodiode with I-V Amplifier	Current-to-Voltage conversion onboard.
	Model Variant	S1226-8BQ	“8” = High Gain. “BQ” = Daylight Filter.
	Detector Type	Silicon PIN Photodiode
	Amplifier Type	Built-in Op-Amp Circuit
Optical Characteristics	Spectral Response Range	320 nm to 720 nm	Filters out near-infrared (NIR) light.
	Photosensitive Area Size	0.8 mm² (Typ.)
	Peak Wavelength (λ<sub>p</sub>)	560 nm (Typ.)	Matches the photopic vision (human eye) peak.
	Radiant Sensitivity at λ<sub>p</sub>	0.45 A/W (Typ.)
	Luminous Sensitivity	85 V/lx (Typ.)	V<sub>DD</sub>=5V. Extremely high output for low light levels.
Electrical Characteristics (Amplifier)	Supply Voltage (V<sub>DD</sub>)	+5 VDC (Absolute max: ±6 V)	Single +5V operation.
	Supply Current	0.8 mA (Typ.)	Low power consumption.
	Output Voltage Range	0.1 V to 4.0 V	V<sub>DD</sub> = +5V. Rail-to-rail output.
	Output Impedance	1 Ω (Typ.)	Can drive loads directly.
	Conversion Gain (Transimpedance)	1.0 x 10<sup>6</sup> V/A (1 MV/A)	Fixed gain of 1,000,000. Output is 1V per 1µA of photocurrent.
	Bandwidth (-3dB)	1 kHz (Typ.)	C<sub>L</sub> ≤ 100 pF. Designed for steady-state light measurement.
	Dark Output Voltage	2 mV (Typ.)	V<sub>DD</sub> = +5V, E<sub>v</sub> = 0 lx.
Mechanical & Environmental	Package	4-pin Plastic Mold	Pins: 1=Vout, 2=GND, 3=NC, 4=Vdd
	Window Material	Clear Epoxy with Daylight Filter	“BQ” model. Filters out IR to match the human eye response.
	Operating Temperature	-10 °C to +60 °C
	Storage Temperature	-25 °C to +65 °C
Key Features		• Integrated Amplifier & Photodiode • Spectral Response Matches Human Eye (Vλ) • Single +5V Supply • Very High Gain (1 MV/A) • High Luminous Sensitivity (85 V/lx) • Voltage Output	The ultimate choice for low-light photometric measurement.