G6849-01

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Technical Specifications: G6849-01

Parameter Category	Parameter	Symbol	Min	Typ	Max	Unit	Conditions
General Information	Manufacturer Part Number	–		G6849-01
	Description	–		NPN Silicon Darlington Transistor (Selected High Gain)
	Package	–		TO-220			Through-Hole, Isolated Tab
Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)
	Collector-to-Emitter Voltage	V<sub>CEO</sub>			400	V
	Collector-to-Base Voltage	V<sub>CBO</sub>			500	V
	Emitter-to-Base Voltage	V<sub>EBO</sub>			5.0	V
	Continuous Collector Current	I<sub>C</sub>			8	A
	Peak Collector Current	I<sub>CM</sub>			15	A
	Total Power Dissipation	P<sub>D</sub>			80	W	T<sub>C</sub> = 25°C
	Junction Temperature	T<sub>J</sub>	-65		150	°C
	Storage Temperature	T<sub>stg</sub>	-65		150	°C
Thermal Characteristics
	Junction-to-Case Thermal Resistance	R<sub>θJC</sub>		1.56		°C/W
On Characteristics (T<sub>J</sub> = 25°C unless otherwise noted)
	DC Current Gain (Key Differentiator)	h<sub>FE</sub>	1500	30000			I<sub>C</sub> = 2A, V<sub>CE</sub> = 4V
			1200	25000			I<sub>C</sub> = 4A, V<sub>CE</sub> = 4V
			800	15000			I<sub>C</sub> = 8A, V<sub>CE</sub> = 4V
	Collector-Emitter Saturation Voltage	V<sub>CE(sat)</sub>		1.5	2.5	V	I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA
	Base-Emitter Saturation Voltage	V<sub>BE(sat)</sub>		1.8	2.5	V	I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA
	Turn-On Time	t<sub>on</sub>		1.2		µs	V<sub>CC</sub> = 200V, I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA
	Turn-Off Time	t<sub>off</sub>		5.5		µs	V<sub>CC</sub> = 200V, I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA, I<sub>B2</sub> = -4mA
Off Characteristics
	Collector Cut-off Current	I<sub>CEO</sub>			0.1	mA	V<sub>CE</sub> = 400V, V<sub>BE</sub> = 0V