S1337-33BR

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It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You’ll receive an order information email in your inbox. (Please remember to check the spam folder if you didn’t hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

S1337-33BR NPN Silicon RF Transistor – Technical Parameters

Parameter Category	Symbol	Value	Unit	Conditions / Notes
Absolute Maximum Ratings
Collector-Base Voltage	V<sub>CB</sub>	15	V
Collector-Emitter Voltage	V<sub>CE</sub>	12	V
Emitter-Base Voltage	V<sub>EB</sub>	3	V
Collector Current	I<sub>C</sub>	30	mA
Total Power Dissipation	P<sub>T</sub>	100	mW	T<sub>a</sub> = 25°C
Junction Temperature	T<sub>j</sub>	125	°C
Storage Temperature	T<sub>stg</sub>	-55 to +150	°C
Electrical Characteristics (T<sub>a</sub> = 25°C unless otherwise noted)
Off Characteristics
Collector-Base Breakdown Voltage	BV<sub>CBO</sub>	15	V	I<sub>C</sub> = 10 μA
Collector-Emitter Breakdown Voltage	BV<sub>CEO</sub>	12	V	I<sub>C</sub> = 10 μA
Emitter-Base Breakdown Voltage	BV<sub>EBO</sub>	3	V	I<sub>E</sub> = 10 μA
Collector Cut-off Current	I<sub>CBO</sub>	–	0.1	μA	V<sub>CB</sub> = 10 V
On Characteristics
DC Current Gain	h<sub>FE</sub>	100 ~ 200	–	This is the key difference from the 33BQ. V<sub>CE</sub> = 6 V, I<sub>C</sub> = 5 mA
Small Signal Characteristics
Transition Frequency	f<sub>T</sub>	9.0	GHz	Min.	V<sub>CE</sub> = 10 V, I<sub>C</sub> = 10 mA, f = 500 MHz
Output Capacitance	C<sub>ob</sub>	0.35	pF	Typ.	V<sub>CB</sub> = 10 V, I<sub>E</sub> = 0, f = 1 MHz
Noise Characteristics
Noise Figure	NF	1.3	dB	Typ.	V<sub>CE</sub> = 10 V, I<sub>C</sub> = 5 mA, f = 1 GHz
		2.0	dB	Max.
Power Characteristics
Power Gain	G<sub>pe</sub>	14	dB	Typ.	V<sub>CE</sub> = 10 V, I<sub>C</sub> = 10 mA, f = 1 GHz