S1223-01

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Hamamatsu S1223-01 Silicon PIN Photodiode Specifications

Parameter Category	Parameter	Specification / Value	Notes / Conditions
General Model Info	Product Type	Silicon PIN Photodiode
	Series	S1223
	Variant	S1223-01	Distinguished by its larger active area.
	Active Area Size	2.4 mm x 2.4 mm (5.76 mm²)	Key difference from the standard S1223 (1 mm²).
	Package Type	Plastic Mold (Two lead pins)
	Window Material	Epoxy Mold
Spectral Response	Spectral Response Range	320 nm to 1100 nm	Visible to near-infrared light.
	Peak Sensitivity Wavelength	960 nm (Typ.)
	Radiant Sensitivity at λ<sub>p</sub>	0.62 A/W (Typ.)	At 960 nm. Slightly higher due to structure.
	Photosensitivity	0.42 A/W (Typ.)	At 555 nm.
	Quantum Efficiency at λ<sub>p</sub>	80 % (Typ.)	At 960 nm.
Electrical Characteristics	Dark Current (I<sub>D</sub>)	2 nA (max.)	V<sub>R</sub> = 10 mV, T<sub>a</sub> = 25°C. Slightly higher than smaller area models.
	Terminal Capacitance (C<sub>t</sub>)	35 pF (Typ.)	V<sub>R</sub> = 0 V, f = 1 MHz. Larger than S1223 due to larger area.
	Shunt Resistance (R<sub>sh</sub>)	5 GΩ (Typ.)	V<sub>R</sub> = 10 mV.
	Breakdown Voltage (V<sub>BR</sub>)	40 V (min.)	I<sub>R</sub> = 10 μA.
	Maximum Reverse Voltage (V<sub>R</sub>)	10 V
	Rise Time / Fall Time (t<sub>r</sub>, t<sub>f</sub>)	8 ns (Typ.)	V<sub>R</sub> = 10 V, R<sub>L</sub> = 50 Ω, λ = 660 nm. Slower than S1223 due to higher capacitance.
Operating Conditions	Operating Temperature	-20 °C to +60 °C
	Storage Temperature	-20 °C to +60 °C
Key Features & Comparisons		• Larger Active Area (5.76 mm²) – Collects more light. • Higher Capacitance (35 pF) – Limits maximum speed. • Slightly Higher Dark Current – Due to larger volume. • Ideal for sensitivity-critical, speed-non-critical apps	Trade-off: More signal vs. slower response.