G6849

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Technical Specifications: G6849

Parameter Category	Parameter	Symbol	Min	Typ	Max	Unit	Conditions
General Information	Manufacturer Part Number	–		G6849
	Description	–		NPN Epitaxial Silicon Darlington Transistor			Built-in base-emitter resistor
	Package	–		TO-220			Through-Hole, Isolated Tab
Absolute Maximum Ratings (Ta = 25°C unless otherwise noted)
	Collector-to-Emitter Voltage	V<sub>CEO</sub>			400	V
	Collector-to-Base Voltage	V<sub>CBO</sub>			500	V
	Emitter-to-Base Voltage	V<sub>EBO</sub>			5.0	V
	Continuous Collector Current	I<sub>C</sub>			8	A
	Peak Collector Current	I<sub>CM</sub>			15	A
	Total Power Dissipation	P<sub>D</sub>			80	W	T<sub>C</sub> = 25°C
					2.0	W	T<sub>A</sub> = 25°C (no heatsink)
	Derating Factor			0.64		W/°C	For T<sub>C</sub> > 25°C
	Junction Temperature	T<sub>J</sub>	-65		150	°C
	Storage Temperature	T<sub>stg</sub>	-65		150	°C
Thermal Characteristics
	Junction-to-Case Thermal Resistance	R<sub>θJC</sub>		1.56		°C/W
	Case-to-Sink Thermal Resistance	R<sub>θCS</sub>		0.50		°C/W	With insulating washer & grease
On Characteristics (T<sub>J</sub> = 25°C unless otherwise noted)
	Collector-Emitter Saturation Voltage	V<sub>CE(sat)</sub>		1.2	2.0	V	I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA
				2.5	4.0	V	I<sub>C</sub> = 8A, I<sub>B</sub> = 8mA
	DC Current Gain	h<sub>FE</sub>	1000	20000			I<sub>C</sub> = 4A, V<sub>CE</sub> = 4V
			500	10000			I<sub>C</sub> = 8A, V<sub>CE</sub> = 4V
	Base-Emitter Saturation Voltage	V<sub>BE(sat)</sub>		1.8	2.5	V	I<sub>C</sub> = 4A, I<sub>B</sub> = 2mA
	Turn-On Time	t<sub>on</sub>		1.0		µs	V<sub>CC</sub> = 200V, I<sub>C</sub> = 4A,
	Turn-Off Time	t<sub>off</sub>		5.0		µs	I<sub>B1</sub> = 2mA, I<sub>B2</sub> = -4mA
Off Characteristics
	Collector Cut-off Current	I<sub>CEO</sub>			0.1	mA	V<sub>CE</sub> = 400V, V<sub>BE</sub> = 0V
					1.0	mA	V<sub>CE</sub> = 400V, T<sub>J</sub> = 100°C