C5594

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Product Specifications: C5594 NPN Silicon Epitaxial Planar Transistor (For Switching and Amplification)

This table provides the key electrical and mechanical characteristics of the C5594 transistor.

Category	Parameter	Symbol	Value / Rating	Unit
Absolute Maximum Ratings	Collector-Base Voltage	V<sub>CBO</sub>	60	V
(Ta = 25°C)	Collector-Emitter Voltage	V<sub>CEO</sub>	50	V
	Emitter-Base Voltage	V<sub>EBO</sub>	7	V
	Collector Current	I<sub>C</sub>	0.5	A
	Base Current	I<sub>B</sub>	0.1	A
	Total Power Dissipation	P<sub>tot</sub>	0.5	W
	Junction Temperature	T<sub>j</sub>	150	°C
	Storage Temperature	T<sub>stg</sub>	-55 to +150	°C
Electrical Characteristics	DC Current Gain	h<sub>FE</sub>	100 ~ 320	–
(Ta = 25°C)	(Condition: I<sub>C</sub>=50mA, V<sub>CE</sub>=2V)
	Collector-Emitter Saturation Voltage	V<sub>CE(sat)</sub>	0.25 (Max)	V
	(Condition: I<sub>C</sub>=100mA, I<sub>B</sub>=10mA)
	Base-Emitter Saturation Voltage	V<sub>BE(sat)</sub>	0.95 (Max)	V
	(Condition: I<sub>C</sub>=100mA, I<sub>B</sub>=10mA)
	Collector Cut-off Current	I<sub>CBO</sub>	0.1 (Max)	µA
	(Condition: V<sub>CB</sub>=50V, I<sub>E</sub>=0)
	Emitter Cut-off Current	I<sub>EBO</sub>	0.1 (Max)	µA
	(Condition: V<sub>EB</sub>=7V, I<sub>C</sub>=0)
	Transition Frequency	f<sub>T</sub>	150 (Min)	MHz
	(Condition: V<sub>CE</sub>=10V, I<sub>C</sub>=10mA, f=100MHz)
Mechanical Characteristics	Package	–	TO-92	–
	Polarity	–	NPN	–
	Material	–	Silicon (Si)	–